Hopping transport in multiple-dot silicon single electron MOSFET

Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Article

4 引用 (Scopus)

抜粋

The transport properties in multiple-dot single electron MOSFETs have been investigated by numerical calculation solving the master equation. In multiple-dot single electron devices, the capacitive coupling effects play an important role in the electron transport. The calculation shows that the transport in the multiple-dot system is governed by the phonon assisted hopping if the single electron charging energy and coupling energy are larger than the thermal energy. The result is in good agreement with the experimental results of silicon narrow channel MOSFETs and confirms the hopping transport model in the multiple-dot system we proposed in our previous paper.

元の言語English
ページ(範囲)1425-1428
ページ数4
ジャーナルSolid-State Electronics
42
発行部数7-8
DOI
出版物ステータスPublished - 1998 1 1
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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