Host isotope effect on the local vibration modes of VH2 and VOH2 defects in isotopically enriched28Si, 29Si and30Si single crystals

Takeru Ohya, Kohei M Itoh, Rui N. Pereira, Brian Bech Nielsen

研究成果: Article

2 引用 (Scopus)

抄録

Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.

元の言語English
ページ(範囲)7309-7313
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
発行部数10
DOI
出版物ステータスPublished - 2005 10 11

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isotope effect
Isotopes
vibration mode
Single crystals
Atoms
Defects
Vacancies
hydrogen atoms
single crystals
defects
Silicon
Hydrogen
Infrared absorption
silicon
Absorption spectroscopy
infrared absorption
Infrared spectroscopy
absorption spectroscopy
infrared spectroscopy
oscillators

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

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abstract = "Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.",
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T1 - Host isotope effect on the local vibration modes of VH2 and VOH2 defects in isotopically enriched28Si, 29Si and30Si single crystals

AU - Ohya, Takeru

AU - Itoh, Kohei M

AU - Pereira, Rui N.

AU - Nielsen, Brian Bech

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N2 - Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.

AB - Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.

KW - Defect

KW - Infrared spectroscopy

KW - Isotope engineering

KW - Local vibrational mode

KW - Oxygen

KW - Silicon

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