Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2005 10月 11|
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