Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

T. Sekiguchi, A. M. Tyryshkin, S. Tojo, E. Abe, R. Mori, H. Riemann, N. V. Abrosimov, P. Becker, H. J. Pohl, J. W. Ager, E. E. Haller, M. L W Thewalt, J. J L Morton, S. A. Lyon, Kohei M Itoh

研究成果: Article

3 引用 (Scopus)

抄録

The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split 31P, As75, Sb121, Sb123, and Bi209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si28, Si29, and Si30. Further investigation with 31P donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.

元の言語English
記事番号121203
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
90
発行部数12
DOI
出版物ステータスPublished - 2014 9 22

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Silicon
Isotopes
isotopes
Electrons
silicon
electrons
interactions
resonance lines
occupation
Single crystals
Spectroscopy
shift
single crystals
spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

これを引用

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon. / Sekiguchi, T.; Tyryshkin, A. M.; Tojo, S.; Abe, E.; Mori, R.; Riemann, H.; Abrosimov, N. V.; Becker, P.; Pohl, H. J.; Ager, J. W.; Haller, E. E.; Thewalt, M. L W; Morton, J. J L; Lyon, S. A.; Itoh, Kohei M.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 90, 番号 12, 121203, 22.09.2014.

研究成果: Article

Sekiguchi, T, Tyryshkin, AM, Tojo, S, Abe, E, Mori, R, Riemann, H, Abrosimov, NV, Becker, P, Pohl, HJ, Ager, JW, Haller, EE, Thewalt, MLW, Morton, JJL, Lyon, SA & Itoh, KM 2014, 'Host isotope mass effects on the hyperfine interaction of group-V donors in silicon', Physical Review B - Condensed Matter and Materials Physics, 巻. 90, 番号 12, 121203. https://doi.org/10.1103/PhysRevB.90.121203
Sekiguchi, T. ; Tyryshkin, A. M. ; Tojo, S. ; Abe, E. ; Mori, R. ; Riemann, H. ; Abrosimov, N. V. ; Becker, P. ; Pohl, H. J. ; Ager, J. W. ; Haller, E. E. ; Thewalt, M. L W ; Morton, J. J L ; Lyon, S. A. ; Itoh, Kohei M. / Host isotope mass effects on the hyperfine interaction of group-V donors in silicon. :: Physical Review B - Condensed Matter and Materials Physics. 2014 ; 巻 90, 番号 12.
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AU - Tyryshkin, A. M.

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AU - Abe, E.

AU - Mori, R.

AU - Riemann, H.

AU - Abrosimov, N. V.

AU - Becker, P.

AU - Pohl, H. J.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Thewalt, M. L W

AU - Morton, J. J L

AU - Lyon, S. A.

AU - Itoh, Kohei M

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AB - The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split 31P, As75, Sb121, Sb123, and Bi209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si28, Si29, and Si30. Further investigation with 31P donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.

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