Hot-pressed Ti-Al targets for synthesizing Ti1-xAlxN films by the arc ion plating method

Ayako Kimura, Tomohiro Murakami, Kunihiro Yamada, Tetsuya Suzuki

研究成果: Article査読

27 被引用数 (Scopus)

抄録

Ti and Al powders were mixed with identical atomic ratios and hot-pressed at 650, 800, 950, 1100 and 1250 °C, respectively, for the use of targets in the arc ion plating (AIP) method. As the sintering temperatures increased, the target density monotonously increased and the porosity correspondingly decreased. Chemical analysis by X-ray diffraction indicated that pure Ti and Al phases decreased and intermetallics such as TiAl3 and Ti3Al phases were formed at 800-950 °C. Over 950 °C, the amount of the intermetallics decreased and finally TiAl phase was formed. Next, the Ti-Al targets were arc-discharged in nitrogen plasma and Ti1-xAlxN films were deposited on mirror-polished cemented carbide substrates. The targets with lower density, sintered at 650 and 800 °C, did not easily trigger and keep stable arc-discharge during the deposition. As a result, synthesized Ti1-xAlxN films had a larger number and size of droplets which were not only circular but were also irregular shapes. Although microstructures of Ti-Al targets were quite different, all films mostly consisted of Ti0.5Al0.5N with the NaCl structure and similar hardness with approximately 3000 HV. Further, all Ti0.5Al0.5N films had the same columnar cross-sectional structures and the growth rate was approximately 17 μm/h.

本文言語English
ページ(範囲)101-105
ページ数5
ジャーナルThin Solid Films
382
1-2
DOI
出版ステータスPublished - 2001 2 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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