抄録
GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1352-1353 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 34 |
| 号 | 13 |
| DOI | |
| 出版ステータス | Published - 1998 6月 25 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学