A paramagnetic recombination center having an orthorhombic symmetry with g= 2.0095(2), g= 2.0038(2), and g [̄110]= 2.0029(2) is found at the interface between silicon and native oxide. The center is referred to P m center and observed by a spin dependent recombination based electron paramagnetic resonance detection that has the sensitivity of ∼10 11 spins/cm 2. The employment of an isotopically enriched 28Si sample with the concentration of 29Si nuclear spins reduced to 0.017% leads to narrowing of the resonance line. This narrowing is the key for the accurate determination of the angular dependence of the g-factor.
ASJC Scopus subject areas