Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces

M. Otsuka; T. Matsuoka; L. S. Vlasenko; M. P. Vlasenko; K. M. Itoh

doi:10.1063/1.4820824

Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO₂ interfaces

M. Otsuka, T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, K. M. Itoh

塾長

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

A recombination center at Si surfaces and Si/SiO₂ interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

本文言語	English
論文番号	111601
ジャーナル	Applied Physics Letters
巻	103
号	11
DOI	https://doi.org/10.1063/1.4820824
出版ステータス	Published - 2013 9月 9

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.4820824

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引用スタイル

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title = "Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces",

abstract = "A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.",

author = "M. Otsuka and T. Matsuoka and Vlasenko, {L. S.} and Vlasenko, {M. P.} and Itoh, {K. M.}",

note = "Funding Information: This work was supported in part by CREST-JST, in part by a Grant-in-Aid for Scientific Research and the Project for Developing Innovation Systems of MEXT, and in part by the JSPS Core-to-Core Program.",

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T1 - Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces

AU - Otsuka, M.

AU - Matsuoka, T.

AU - Vlasenko, L. S.

AU - Vlasenko, M. P.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported in part by CREST-JST, in part by a Grant-in-Aid for Scientific Research and the Project for Developing Innovation Systems of MEXT, and in part by the JSPS Core-to-Core Program.

PY - 2013/9/9

Y1 - 2013/9/9

N2 - A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

AB - A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

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