Imaging of current paths and defects in Al and TiSi interconnects on very-large-scale integrated-circuit chips using near-field optical-probe stimulation and resulting resistance change

K. Nikawa, T. Saiki, S. Inoue, M. Ohtsu

研究成果: Article査読

20 被引用数 (Scopus)

抄録

The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The near-field OBIRCH method has two advantages over the conventional one: (1) its spatial resolution is higher (50 vs 400 nm) and (2) the optical-probe-induced resistance change caused by heating can be observed using a metallized probe without interference from a photocurrent created by electron-hole-pair generation. In the conventional-OBIRCH method, the laser beam creates not only a resistance change, but also a photocurrent that can mask the resistance change signals.

本文言語English
ページ(範囲)1048-1050
ページ数3
ジャーナルApplied Physics Letters
74
7
DOI
出版ステータスPublished - 1999 2月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Imaging of current paths and defects in Al and TiSi interconnects on very-large-scale integrated-circuit chips using near-field optical-probe stimulation and resulting resistance change」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル