Impact Ionization and Critical Electric Field in 010-Oriented β-Ga2O3Schottky Barrier Diode

Takaya Sugiura, Nobuhiko Nakano

研究成果: Article査読

抄録

The hole impact ionization coefficient (IIC) of β -Ga2O3 in the 〈 010〉 direction is determined by numerical simulation, as β (E) = 4.0× 105 ċ exp(-3.1 × 106E. The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.

本文言語English
ページ(範囲)3068-3072
ページ数5
ジャーナルIEEE Transactions on Electron Devices
69
6
DOI
出版ステータスPublished - 2022 6月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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