Impact of a binary Ga2Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties

Shogo Ishizuka, Akimasa Yamada, Paul J. Fons, Hajime Shibata, Shigeru Niki

研究成果: Article査読

22 被引用数 (Scopus)

抄録

CuGaSe2 (CGS) thin-films grown by the three-stage coevaporation process using various Se-fluxes during each growth stage exhibited distinctive properties different from those grown with a constant Se-flux during all three stages. CGS grain size, growth orientation, and the depletion width in solar cell devices were found to depend strongly on the Ga2Se3 precursor formed during the first stage, whereas photo-absorption spectra and device parameters were largely determined by the Se-flux used during the second and third stages when the CGS film near-surface region was formed. A certified efficiency exceeding 10 demonstrated for a ternary CGS solar cell is also reported.

本文言語English
論文番号143903
ジャーナルApplied Physics Letters
103
14
DOI
出版ステータスPublished - 2013 9月 30
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Impact of a binary Ga2Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル