抄録
The effect of axial strain on the performance of carbon-nanotube field-effect transistors with doped junctions is studied. When the diameter of carbon nanotubes (CNTs) is less than 1.5 nm, the decrease of the off-current by axial strain occurs together with the decrease of on-current. However, if the diameter of CNTs is larger than 1.5 nm, axial strain is effective for decreasing off-current while enhancing the on-current at the same time. The decrease of off-current is due to the opening of the bandgap by axial strain, whereas the increase of on-current is attributable to current flowing through the first excited state.
本文言語 | English |
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論文番号 | 203520 |
ジャーナル | Applied Physics Letters |
巻 | 91 |
号 | 20 |
DOI | |
出版ステータス | Published - 2007 11 23 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)