Impact of axial strain on drain current of carbon-nanotube field-effect transistors with doped junctions

Ken Uchida, Masumi Saitoh

    研究成果: Article査読

    9 被引用数 (Scopus)

    抄録

    The effect of axial strain on the performance of carbon-nanotube field-effect transistors with doped junctions is studied. When the diameter of carbon nanotubes (CNTs) is less than 1.5 nm, the decrease of the off-current by axial strain occurs together with the decrease of on-current. However, if the diameter of CNTs is larger than 1.5 nm, axial strain is effective for decreasing off-current while enhancing the on-current at the same time. The decrease of off-current is due to the opening of the bandgap by axial strain, whereas the increase of on-current is attributable to current flowing through the first excited state.

    本文言語English
    論文番号203520
    ジャーナルApplied Physics Letters
    91
    20
    DOI
    出版ステータスPublished - 2007 11 23

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

    フィンガープリント

    「Impact of axial strain on drain current of carbon-nanotube field-effect transistors with doped junctions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル