Impact of Deformation potential increase at Si/SiO2 interfaces on stress-induced electron mobility enhancement in metal-oxide-semiconductor field-effect transistors

Teruyuki Ohashi, Shunri Oda, Ken Uchida

    研究成果: Article査読

    7 被引用数 (Scopus)

    抄録

    The impact of deformation potential increase at metal-oxide-semiconductor (MOS) interfaces on stress effects is thoroughly studied. In our previous study, we revealed that the deformation potential (Dac) of Si increases at MOS interfaces. The energy split between two-and four-fold valleys is proportional to Dac. Therefore, it is considered that the Dac increase at MOS interfaces has an affect on strain effects. Dac effectively changes by adjusting Si-on-insulator (SOI) thickness and carrier distribution at MOS interfaces. Therefore, the SOI thickness dependence and carrier distribution dependence of electron mobility enhancement ratio (μe/μe) under strain are investigated. Experimental results are explained by the model including the Dac increase at MOS interfaces. In addition, experimental data are well reproduced by calculation using the positiondependent-Dac model. By applying uniaxial strain, effective mass, subband occupation, and intervalley scattering rate are also changed. Their effects on e=e are also discussed in this paper.

    本文言語English
    論文番号04CC12
    ジャーナルJapanese journal of applied physics
    52
    4 PART 2
    DOI
    出版ステータスPublished - 2013 4 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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