Impact of the device scaling on the low-frequency noise in n-MOSFETs

H. M. Bu, Y. Shi, X. L. Yuan, Y. D. Zheng, S. H. Gu, H. Majima, Hiroki Ishikuro, T. Hiramoto

研究成果: Article

27 引用 (Scopus)

抄録

The impact of device scaling on modern MOS technology is discussed in terms of the random telegraph signals (RTSs) and low-frequency noise in n-MOSFETs with gradually decreased channel widths. RTSs with very large amplitude (> 60%) are observed in the devices with ultra-narrow channels at room temperature for the first time. Furthermore, low-frequency noise spectra having both 1/f′ and Lorentzian type are found separately in the same ultra-narrow channel at different gate bias voltage, whereas only 1/f′ noise is observed in relatively wide channels. The observations strongly suggest that low-frequency noise in weak inversion dominantly suffer from carrier mobility fluctuation rather than carrier number fluctuation in ultra-narrow channels, which is confirmed by numerical simulations.

元の言語English
ページ(範囲)133-136
ページ数4
ジャーナルApplied Physics A: Materials Science and Processing
71
発行部数2
出版物ステータスPublished - 2000 8
外部発表Yes

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Telegraph
field effect transistors
low frequencies
scaling
Carrier mobility
Bias voltage
Computer simulation
noise spectra
carrier mobility
Temperature
inversions
electric potential
room temperature
simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

これを引用

Bu, H. M., Shi, Y., Yuan, X. L., Zheng, Y. D., Gu, S. H., Majima, H., ... Hiramoto, T. (2000). Impact of the device scaling on the low-frequency noise in n-MOSFETs. Applied Physics A: Materials Science and Processing, 71(2), 133-136.

Impact of the device scaling on the low-frequency noise in n-MOSFETs. / Bu, H. M.; Shi, Y.; Yuan, X. L.; Zheng, Y. D.; Gu, S. H.; Majima, H.; Ishikuro, Hiroki; Hiramoto, T.

:: Applied Physics A: Materials Science and Processing, 巻 71, 番号 2, 08.2000, p. 133-136.

研究成果: Article

Bu, HM, Shi, Y, Yuan, XL, Zheng, YD, Gu, SH, Majima, H, Ishikuro, H & Hiramoto, T 2000, 'Impact of the device scaling on the low-frequency noise in n-MOSFETs', Applied Physics A: Materials Science and Processing, 巻. 71, 番号 2, pp. 133-136.
Bu HM, Shi Y, Yuan XL, Zheng YD, Gu SH, Majima H その他. Impact of the device scaling on the low-frequency noise in n-MOSFETs. Applied Physics A: Materials Science and Processing. 2000 8;71(2):133-136.
Bu, H. M. ; Shi, Y. ; Yuan, X. L. ; Zheng, Y. D. ; Gu, S. H. ; Majima, H. ; Ishikuro, Hiroki ; Hiramoto, T. / Impact of the device scaling on the low-frequency noise in n-MOSFETs. :: Applied Physics A: Materials Science and Processing. 2000 ; 巻 71, 番号 2. pp. 133-136.
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