Impact of the device scaling on the low-frequency noise in n-MOSFETs

H. M. Bu, Y. Shi, X. L. Yuan, Y. D. Zheng, S. H. Gu, H. Majima, H. Ishikuro, T. Hiramoto

研究成果: Article

27 引用 (Scopus)

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The impact of device scaling on modern MOS technology is discussed in terms of the random telegraph signals (RTSs) and low-frequency noise in n-MOSFETs with gradually decreased channel widths. RTSs with very large amplitude (> 60%) are observed in the devices with ultra-narrow channels at room temperature for the first time. Furthermore, low-frequency noise spectra having both 1/f′ and Lorentzian type are found separately in the same ultra-narrow channel at different gate bias voltage, whereas only 1/f′ noise is observed in relatively wide channels. The observations strongly suggest that low-frequency noise in weak inversion dominantly suffer from carrier mobility fluctuation rather than carrier number fluctuation in ultra-narrow channels, which is confirmed by numerical simulations.

元の言語English
ページ(範囲)133-136
ページ数4
ジャーナルApplied Physics A: Materials Science and Processing
71
発行部数2
出版物ステータスPublished - 2000 8 1
外部発表Yes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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  • これを引用

    Bu, H. M., Shi, Y., Yuan, X. L., Zheng, Y. D., Gu, S. H., Majima, H., Ishikuro, H., & Hiramoto, T. (2000). Impact of the device scaling on the low-frequency noise in n-MOSFETs. Applied Physics A: Materials Science and Processing, 71(2), 133-136.