Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Ken Nakahara, Kentaro Tamura, Mitsuhiko Sakai, Daisuke Nakagawa, Norikazu Ito, Masayuki Sonobe, Hidemi Takasu, Hitoshi Tampo, Paul Fons, Koji Matsubara, Kakuya Iwata, Akimasa Yamada, Shigeru Niki

研究成果: Article査読

63 被引用数 (Scopus)

抄録

Transparent conductive Ga-doped ZnO (ZnO:Ga) was fabricated to serve as p-contacts of InGaN-based light-emitting diodes (LEDs) using molecular-beam epitaxy. As-grown ZnO:Ga films typically have resistivities of ρ = 2 - 4 × 10-4 Ω-cm, and over 80% transparency in the near UV and visible wavelength ranges. The current-voltage characteristics between as-grown ZnO:Ga contacts and p-GaN layers were ohmic. The brightness of LEDs fabricated with ZnO:Ga p-contacts was nearly double compared to LEDs with conventional Ni/Au p-contacts. We obtained the external efficiency as high as 20.8% in the case of the near UV LED. The forward voltage at 20mA was found not to increase even after the lamp LED with ZnO:Ga were kept for 80h in high humidity and high temperature environments.

本文言語English
ページ(範囲)L180-L182
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
2 A
DOI
出版ステータスPublished - 2004 2 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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