Improvement in electrical properties of carbon nanotube via interconnects

Masayuki Katagiri, Yuichi Yamazaki, Makoto Wada, Masayuki Kitamura, Naoshi Sakuma, Mariko Suzuki, Shintaro Sato, Mizuhisa Nihei, Akihiro Kajita, Tadashi Sakai, Yuji Awano

研究成果: Article査読

19 被引用数 (Scopus)

抄録

We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between the CNT via and metal electrodes. For the improvement of the bottom contact formation, a TiN/TaN multilayer on a Cu bottom wiring layer is applied to suppress formation of a highly resistive oxide layer on the TaN barrier layer. The top electrode formation with good coverage on CNTs reduces contact resistance. The current-voltage characteristics of ultrafine CNT via interconnects exhibit ohmic behavior. The resistance of the CNT via interconnect is inversely proportional to the via area, indicating that the CNT bundles are grown with uniform quality and density in variousdiameter via holes.

本文言語English
論文番号05EF01
ジャーナルJapanese journal of applied physics
50
5 PART 2
DOI
出版ステータスPublished - 2011 5月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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