TY - JOUR
T1 - Improvement in the aspect ratio of fabricated minute dots by the volume change thermal lithography technique
AU - Kuwahara, M.
AU - Kim, J. H.
AU - Fons, P.
AU - Tominaga, J.
N1 - Funding Information:
AFM observations were supported by The Ministry of Education, Culture, Sports, Science and Technology under the aegis of the Nanotechnology Support Project. We thank Foundation for Promotion of Material Science and Technology of Japan for the TEM observation.
PY - 2005/3
Y1 - 2005/3
N2 - Volume change thermal lithography has been developed as a low cost and simple lithography technique for application in optical mastering. The combination of the temperature distribution induced by a focused laser spot with a Gaussian distribution and a special multilayer consisting of TbFeCo and ZnS-SiO2 are utilized. Application of heat to these materials induces interdiffusion and as a result local volume expansion leading to the formation of a convex surface region. This technique was used to fabricate nano-dots with dimensions less them 100 nm on the sample surface. Typical nano-dot height, however, was less than 20 nm and this value is not sufficient for the pit height of an optical master disk. To address this problem, a PtOx film was inserted between the TbFeCo and ZnS-SiO2 layers. Laser irradiated PtOx decomposed to Pt and oxygen leading to additional surface protrusion due to the combination of the thermally induced interdiffusion of the TbFeCo and ZnS-SiO2 region and PtOx decomposition induced compressive stress. Nano-dots of 110 nm diameter and 37 nm height were successfully fabricated. Transmission electron microscope (TEM) observations of the nano-dot structure are reported.
AB - Volume change thermal lithography has been developed as a low cost and simple lithography technique for application in optical mastering. The combination of the temperature distribution induced by a focused laser spot with a Gaussian distribution and a special multilayer consisting of TbFeCo and ZnS-SiO2 are utilized. Application of heat to these materials induces interdiffusion and as a result local volume expansion leading to the formation of a convex surface region. This technique was used to fabricate nano-dots with dimensions less them 100 nm on the sample surface. Typical nano-dot height, however, was less than 20 nm and this value is not sufficient for the pit height of an optical master disk. To address this problem, a PtOx film was inserted between the TbFeCo and ZnS-SiO2 layers. Laser irradiated PtOx decomposed to Pt and oxygen leading to additional surface protrusion due to the combination of the thermally induced interdiffusion of the TbFeCo and ZnS-SiO2 region and PtOx decomposition induced compressive stress. Nano-dots of 110 nm diameter and 37 nm height were successfully fabricated. Transmission electron microscope (TEM) observations of the nano-dot structure are reported.
KW - Mastering
KW - Optical ROM disk
KW - The diffraction limit
KW - Thermal lithography
KW - Visible laser light
KW - Volume change material
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U2 - 10.1016/j.mee.2004.12.048
DO - 10.1016/j.mee.2004.12.048
M3 - Conference article
AN - SCOPUS:14944375920
SN - 0167-9317
VL - 78-79
SP - 359
EP - 363
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
T2 - Proceedings of the 30th International Conference on Micro- and Nano-Engineering
Y2 - 19 September 2004 through 22 September 2004
ER -