TY - JOUR
T1 - Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE
AU - Iwata, K.
AU - Fons, P.
AU - Niki, S.
AU - Yamada, A.
AU - Matsubara, K.
AU - Nakahara, K.
AU - Takasu, H.
N1 - Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000/7
Y1 - 2000/7
N2 - We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radical source)-MBE. Oxygen polarity (-c) ZnO, which has a flat and smooth surface, was obtained under Zn rich conditions at the initial growth of low temperature buffer layer. High Zn flux is required to grow ZnO at high temperature and form the -c polarity. The high temperature ZnO growth has made possible the improvement of ZnO electrical properties. ZnO epilayers with electron mobilities of 120 cm2/Vs and electron concentrations of 7 × 1016 cm-3 were grown.
AB - We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radical source)-MBE. Oxygen polarity (-c) ZnO, which has a flat and smooth surface, was obtained under Zn rich conditions at the initial growth of low temperature buffer layer. High Zn flux is required to grow ZnO at high temperature and form the -c polarity. The high temperature ZnO growth has made possible the improvement of ZnO electrical properties. ZnO epilayers with electron mobilities of 120 cm2/Vs and electron concentrations of 7 × 1016 cm-3 were grown.
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U2 - 10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO;2-7
DO - 10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO;2-7
M3 - Conference article
AN - SCOPUS:0034226094
SN - 0031-8965
VL - 180
SP - 287
EP - 292
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 1
T2 - 3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000)
Y2 - 6 March 2000 through 10 March 2000
ER -