Impurity Bands in Group-IV Semiconductors

M. Eto, H. Kamimura

研究成果: Chapter

2 被引用数 (Scopus)

抄録

In this chapter, we describe how the impurity band in group-IV semiconductors is a fascinating subject in condensed matter physics and it manifests a rich diversified physics. After surveying the transport phenomena in the impurity band, metal-insulator transitions, and historical development of the localization theory, we discuss in particular how the electron-electron interactions play an important role in producing anomalous properties, such as peculiar spin-dependent phenomena in specific heat, spin susceptibility, magnetoresistance, etc., in the Anderson-localized regime just in the insulating side of metal-insulator transitions. The most part of chapter is devoted to explaining the theoretical development to treat the interplay of disorder and electron-electron interactions in the Anderson-localized regime of the impurity band. The readers can learn how these theories decipher the origins of various mysterious phenomena which the impurity band exhibits.

本文言語English
ホスト出版物のタイトルComprehensive Semiconductor Science and Technology
出版社Elsevier Inc.
ページ77-112
ページ数36
1-6
ISBN(印刷版)9780444531537
DOI
出版ステータスPublished - 2011 1月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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