In situ deposition rate monitoring during the three-stage-growth process of Cu(In,Ga)Se2 absorber films

Ralf Hunger, Keiichiro Sakurai, Akimasa Yamada, Paul Fons, Kakuya Iwata, Koji Matsubara, Shigeru Niki

研究成果: Conference article査読

22 被引用数 (Scopus)

抄録

The controllability of the three-stage-growth process of Cu(In,Ga)Se2 films was investigated, implementing two different substrate temperature monitoring channels simultaneously: (a) a thermocouple at the rear side of the substrate, and (b) a pyrometer, measuring the emission of heat radiation from the front surface of the growing film. By this setup not only the film composition, i.e. the relative incorporation rate of Cu and group III elements, but as well the absolute growth rate can be monitored on-line during growth. The heat radiation intensity during the first growth stage (deposition of (In,Ga)2Se3 precursor films) exhibits characteristic oscillations. The oscillation period is inversely proportional to the growth rate. The oscillations are caused by thickness interference effects of black body radiation within the growing film. By a simulation of the infrared emissivity, the refractive index nigs = 2.9 and absorption coefficient kigs = 0.2 of the growing film could be extracted. Employing our process, Mo/CIGS/CdS/ZnO/Al solar cells with an efficiency up to 16.4% could be realized.

本文言語English
ページ(範囲)16-21
ページ数6
ジャーナルThin Solid Films
431-432
DOI
出版ステータスPublished - 2003 5 1
外部発表はい
イベントProceedings of Symposium B - Strasbourg, France
継続期間: 2002 6 182002 6 21

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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