@inproceedings{17c10e07fc2e428ab3b351a9593a9bcb,
title = "In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current",
abstract = "This work proposes an evaluation technique of self-heating (SH) in a 65-nm bulk CMOS transistor at cryogenic temperature (4.2K). For the in-situ monitoring of self-heating in cryo-CMOS circuits, transient response of the subthreshold drain current is used, which makes it possible to estimate the temperature at on-state of MOSFETs. The relation between the temperature increase by self-heating and power consumption of MOSFET has been experimentally obtained, which will help a design of high performance cryo-CMOS circuits for quantum computer application.",
keywords = "CMOS, cryogenic, in-situ monitoring, quantum computing, self-heating",
author = "Masayuki Ichikawa and Takahisa Tanaka and Ken Uchida and Tomohisa Miyao and Munehiro Tada and Hiroki Ishikuro",
note = "Funding Information: This work was supported by JST [moonshot R&D] [Grant No. JPMJMS2067]. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 ; Conference date: 04-07-2022 Through 06-07-2022",
year = "2022",
doi = "10.1109/LAEDC54796.2022.9908242",
language = "English",
series = "2022 IEEE Latin America Electron Devices Conference, LAEDC 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE Latin America Electron Devices Conference, LAEDC 2022",
}