Incipient chemical reaction on the scratched silicon {111} surface with ethoxy and hydroxy groups

Yuriko Saito, Tetsuhiko Isobe, Mamoru Senna

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Incipient reactions on the scratched Si {111} surface with solutions containing KOH, ethanol, and tetraethyl orthosilicate (TEOS) were examined. In situ scratching in the TEOS solution was also carried out for comparison. A remarkable increase in the dangling bond concentration was detected on the scratched silicon surface by ESR. Similar hemispherical gel deposits were observed parallel to the uniformly coated gel film on the scratched sample after etching by an ethanol/KOH solution as well as by in situ etching in an ethanol/TEOS solution. The hemispherical deposition, being localized at the tip of branched cracks where KOH solutions also preferentially attack, indicates that the incipient chemical reaction on the scratched silicon {111} with ethoxy groups preferentially initiates at the crack tip, as a result of siloxane polycondensation after concurrence of competitive adsorption of ethoxy over hydroxy groups at the concentrated dangling bonds.

本文言語English
ページ(範囲)96-100
ページ数5
ジャーナルJournal of Solid State Chemistry
120
1
DOI
出版ステータスPublished - 1995 11月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 凝縮系物理学
  • 物理化学および理論化学
  • 無機化学
  • 材料化学

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