Individual identification of free hole and electron dynamics in CuIn1-xGaxSe2 thin films by simultaneous monitoring of two optical transitions

Makoto Okano, Hideki Hagiya, Takeaki Sakurai, Katsuhiro Akimoto, Hajime Shibata, Shigeru Niki, Yoshihiko Kanemitsu

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The photocarrier dynamics of CuIn1-xGaxSe2 (CIGS) thin films were studied using white-light transient absorption (TA) measurements, as an understanding of this behavior is essential for improving the performance of solar cells composed of CIGS thin films. A characteristic double-peak structure due to the splitting of the valance bands in the CIGS was observed in the TA spectra under near-band-gap resonant excitation. From a comparison of the TA decay dynamics monitored at these two peaks, it was found that the slow-decay components of the electron and hole relaxation are on the nanosecond timescale. This finding is clear evidence of the long lifetimes of free photocarriers in polycrystalline CIGS thin films.

本文言語English
論文番号181903
ジャーナルApplied Physics Letters
106
18
DOI
出版ステータスPublished - 2015 5月 4
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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