Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes

Naoto Sugiyama, Ryota Sawada, Hiroki Tanaka, Fumihiko Kannari

研究成果: Conference contribution

抜粋

We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.

元の言語English
ホスト出版物のタイトル2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ1-2
ページ数2
2017-January
ISBN(電子版)9781943580279
DOI
出版物ステータスPublished - 2017 10 25
イベント2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States
継続期間: 2017 5 142017 5 19

Other

Other2017 Conference on Lasers and Electro-Optics, CLEO 2017
United States
San Jose
期間17/5/1417/5/19

    フィンガープリント

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

これを引用

Sugiyama, N., Sawada, R., Tanaka, H., & Kannari, F. (2017). Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes. : 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (巻 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_AT.2017.JW2A.91