抜粋
We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| ページ | 1-2 |
| ページ数 | 2 |
| 巻 | 2017-January |
| ISBN（電子版） | 9781943580279 |
| DOI | |
| 出版物ステータス | Published - 2017 10 25 |
| イベント | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States 継続期間: 2017 5 14 → 2017 5 19 |
Other
| Other | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 |
|---|---|
| 国 | United States |
| 市 | San Jose |
| 期間 | 17/5/14 → 17/5/19 |
フィンガープリント
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Instrumentation
これを引用
Sugiyama, N., Sawada, R., Tanaka, H., & Kannari, F. (2017). Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes. ： 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (巻 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_AT.2017.JW2A.91