Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes

Naoto Sugiyama, Ryota Sawada, Hiroki Tanaka, Fumihiko Kannari

    研究成果: Conference contribution

    抄録

    We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.

    本文言語English
    ホスト出版物のタイトル2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
    出版社Institute of Electrical and Electronics Engineers Inc.
    ページ1-2
    ページ数2
    2017-January
    ISBN(電子版)9781943580279
    DOI
    出版ステータスPublished - 2017 10 25
    イベント2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States
    継続期間: 2017 5 142017 5 19

    Other

    Other2017 Conference on Lasers and Electro-Optics, CLEO 2017
    CountryUnited States
    CitySan Jose
    Period17/5/1417/5/19

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Electronic, Optical and Magnetic Materials
    • Instrumentation

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