Influence of doping level on the electrochemical oxidation of formic acid on boron doped diamond electrodes

Stéphane Fierro, Kyoichi Abe, Christos Comninellis, Yasuaki Einaga

研究成果: Article査読

26 被引用数 (Scopus)

抄録

The influence of the boron doping level in boron doped diamond electrodes (BDD) on the electro-generation of active intermediates (hydroxyl radicals and hydrogen peroxide) involved in the oxidation of organic compounds has been studied. It is shown that the boron doping level of diamond electrodes has no influence on the amount of hydroxyl radicals produced at the electrode surface in contrast with hydrogen peroxide, whose formation is favored by low boron doping levels. The influence of the boron doping level on the degradation of formic acid is also investigated. It is shown that lowly doped diamond films have a slight advantage; proving that hydrogen peroxide does not participate in the process. Moreover, the experimental results were compared with a theoretical model, which considers that the oxidation reaction is fast and controlled by mass transfer. All BDD electrodes showed a good agreement with the model independently of the boron doping level. However, the accuracy of the model tend to decrease with increasing boron content, which is probably due to the participation of active couples, which are known to be present at the surface of diamond films with high boron doping levels.

本文言語English
ページ(範囲)F183-F189
ジャーナルJournal of the Electrochemical Society
158
12
DOI
出版ステータスPublished - 2011 11月 22
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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