By using simple models, we have studied the influence of non-linear like phenomena on very short pMOSFET drivability. We show that the low-field region of the channel acts as a bottleneck for the determination of the on-current. The low-field mobility and medium-field velocity in the beginning of the channel strongly modify the saturation current. In addition, modifications of the high-field transport (>300 kV/cm) in the last 30% of the channel are negligible for the 50 nm pMOSFET drivability, at VG = -1.2 V and for all drain biases.
|ジャーナル||Physica B: Condensed Matter|
|出版ステータス||Published - 1999 12月 1|
|イベント||Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn|
継続期間: 1999 7月 19 → 1999 7月 23
ASJC Scopus subject areas