Influence of non-linear effects on very short pMOSFET device performances

Patrice Houlet, Yuji Awano, Naoki Yokoyama

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

By using simple models, we have studied the influence of non-linear like phenomena on very short pMOSFET drivability. We show that the low-field region of the channel acts as a bottleneck for the determination of the on-current. The low-field mobility and medium-field velocity in the beginning of the channel strongly modify the saturation current. In addition, modifications of the high-field transport (>300 kV/cm) in the last 30% of the channel are negligible for the 50 nm pMOSFET drivability, at VG = -1.2 V and for all drain biases.

本文言語English
ページ(範囲)572-574
ページ数3
ジャーナルPhysica B: Condensed Matter
272
1-4
DOI
出版ステータスPublished - 1999 12月 1
外部発表はい
イベントProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
継続期間: 1999 7月 191999 7月 23

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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