Influence of quantum confinement effects on single electron and single hole transistors

Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Conference contribution

10 引用 (Scopus)

抄録

Influences of quantum confinement effects on the device characteristics of single electron and single hole transistors are studied using Si narrow channel MOSFETs with both p+ and n+ source/drain contacts. Numerical calculations of the energy spectrum in silicon quantum dots are also carried out to support the experimental results. The obtained results indicate the difficulty in predicting the peak positions of the Coulomb blockade oscillations due to the quantum confinement effects in nano-scale devices. For the application of SETs, a new method to adjust the peak position by injecting charges into silicon nano-crystals or traps is proposed and demonstrated.

元の言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting
編集者 Anon
出版者IEEE
ページ119-122
ページ数4
出版物ステータスPublished - 1998
外部発表Yes
イベントProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
継続期間: 1998 12 61998 12 9

Other

OtherProceedings of the 1998 IEEE International Electron Devices Meeting
San Francisco, CA, USA
期間98/12/698/12/9

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Quantum confinement
Transistors
Coulomb blockade
Silicon
Electrons
Semiconductor quantum dots
Crystals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Ishikuro, H., & Hiramoto, T. (1998). Influence of quantum confinement effects on single electron and single hole transistors. : Anon (版), Technical Digest - International Electron Devices Meeting (pp. 119-122). IEEE.

Influence of quantum confinement effects on single electron and single hole transistors. / Ishikuro, Hiroki; Hiramoto, Toshiro.

Technical Digest - International Electron Devices Meeting. 版 / Anon. IEEE, 1998. p. 119-122.

研究成果: Conference contribution

Ishikuro, H & Hiramoto, T 1998, Influence of quantum confinement effects on single electron and single hole transistors. : Anon (版), Technical Digest - International Electron Devices Meeting. IEEE, pp. 119-122, Proceedings of the 1998 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 98/12/6.
Ishikuro H, Hiramoto T. Influence of quantum confinement effects on single electron and single hole transistors. : Anon, 編集者, Technical Digest - International Electron Devices Meeting. IEEE. 1998. p. 119-122
Ishikuro, Hiroki ; Hiramoto, Toshiro. / Influence of quantum confinement effects on single electron and single hole transistors. Technical Digest - International Electron Devices Meeting. 編集者 / Anon. IEEE, 1998. pp. 119-122
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