InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact

K. Tamura, K. Nakahara, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, S. Niki

研究成果: Article査読

19 被引用数 (Scopus)

抄録

Ga-doped ZnO (ZnO: Ga) was fabricated by molecular-beam epitaxy to employ as highly transparent contact electrode on p-GaN layer. ZnO: Ga films have higher transparency in near uv and blue wavelength range than the conventional Ni/Au oxidized alloy p-electrode. The as-deposited ZnO: Ga p-electrodes worked as ohmic contacts for the p-GaN layers without any kind of post annealing processes. The optical power of InGaN light-emitting diode (LED) fabricated with ZnO:Gap-contact was doubled compared to that with Ni/Au p-electrode. The LED chips with ZnO: Ga were operated at forward current of 20 mA in the environment of temperature of 121°C, humidity of 85%, and pressure of 1.6 atm. The tested LED has lifetime of 80 and more hours in this environment.

本文言語English
ページ(範囲)2704-2707
ページ数4
ジャーナルPhysica Status Solidi (A) Applied Research
201
12
DOI
出版ステータスPublished - 2004 9
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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