The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 1987|
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