Interaction between radiation-induced defects and the Pt-related center in silicon

Y. M. Weng; E. Ohta; M. Sakata

doi:10.1063/1.98941

Interaction between radiation-induced defects and the Pt-related center in silicon

Y. M. Weng, E. Ohta, M. Sakata

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level E_a (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

本文言語	English
ページ（範囲）	2206-2207
ページ数	2
ジャーナル	Applied Physics Letters
巻	51
号	26
DOI	https://doi.org/10.1063/1.98941
出版ステータス	Published - 1987
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.98941

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abstract = "The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.",

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AB - The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

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Interaction between radiation-induced defects and the Pt-related center in silicon

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