Intermittently operating RF frontend with 5ns startup time for 10Gbps proximity wireless communication

Naoki Kitazawa; Kaoru Kohira; Hiroki Ishikuro

doi:10.1109/SIRF.2015.7119863

Intermittently operating RF frontend with 5ns startup time for 10Gbps proximity wireless communication

Naoki Kitazawa, Kaoru Kohira, Hiroki Ishikuro

研究成果: Conference contribution

抄録

This paper presents intermittently operating RF frontend for proximity wireless communication with wireless power supply. To realize power scalability of the RF frontend, intermittent operation is performed by switching the bias of the amplifier. Quick startup circuit is proposed to accelerate the charging time to a decoupling capacitor. The fabricated test chip in 65nm CMOS occupies 0.075mm<sup>2</sup>. The 3dB bandwidth of amplifier ranges from 1.8GHz to 7.2GHz and current consumption is 8mA. The startup time of the circuit is 5ns.

本文言語	English
ホスト出版物のタイトル	2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2015
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	24-26
ページ数	3
ISBN（印刷版）	9781479981960
DOI	https://doi.org/10.1109/SIRF.2015.7119863
出版ステータス	Published - 2015 6月 8
イベント	2015 15th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2015 - San Diego, United States 継続期間: 2015 1月 26 → 2015 1月 28

Other

Other	2015 15th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2015
国/地域	United States
City	San Diego
Period	15/1/26 → 15/1/28

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/SIRF.2015.7119863

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Kitazawa, N., Kohira, K., & Ishikuro, H. (2015). Intermittently operating RF frontend with 5ns startup time for 10Gbps proximity wireless communication. In 2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2015 (pp. 24-26). [7119863] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIRF.2015.7119863

Intermittently operating RF frontend with 5ns startup time for 10Gbps proximity wireless communication. / Kitazawa, Naoki; Kohira, Kaoru; Ishikuro, Hiroki.

2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 24-26 7119863.

研究成果: Conference contribution

Kitazawa, N, Kohira, K & Ishikuro, H 2015, Intermittently operating RF frontend with 5ns startup time for 10Gbps proximity wireless communication. in 2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2015., 7119863, Institute of Electrical and Electronics Engineers Inc., pp. 24-26, 2015 15th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2015, San Diego, United States, 15/1/26. https://doi.org/10.1109/SIRF.2015.7119863

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abstract = "This paper presents intermittently operating RF frontend for proximity wireless communication with wireless power supply. To realize power scalability of the RF frontend, intermittent operation is performed by switching the bias of the amplifier. Quick startup circuit is proposed to accelerate the charging time to a decoupling capacitor. The fabricated test chip in 65nm CMOS occupies 0.075mm2. The 3dB bandwidth of amplifier ranges from 1.8GHz to 7.2GHz and current consumption is 8mA. The startup time of the circuit is 5ns.",

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Intermittently operating RF frontend with 5ns startup time for 10Gbps proximity wireless communication

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