Intrinsic- and extrinsic-defect formation in silica glasses by radiation

Hiroaki Imai, Hiroshi Hirashima

研究成果: Article査読

95 被引用数 (Scopus)

抄録

The dose dependence of the defect concentration produced by radiation was studied for many types of silica glass in order to discuss the contribution of 'extrinsic' and 'intrinsic' processes to the paramagnetic defect formation. A linearly increasing concentration of paramagnetic defects with dose accompanied by a saturating tendency is observed for the 'extrinsic' defect formation due to transformation of pre-existing precursors. The concentration of E′ centers substantially equals that of non-bridging oxygen hole centers, and both are approximately proportional to the square-root of the accumulated dose for the 'intrinsic' defect formation involving cleavage of the SiO network. Since the dose dependence of the defects is independent of the incident photon energy, electron-hole pairs having the band gap energy of silica are implied to have an essential role for either 'extrinsic' or 'intrinsic' defect formation.

本文言語English
ページ(範囲)202-213
ページ数12
ジャーナルJournal of Non-Crystalline Solids
179
C
DOI
出版ステータスPublished - 1994 11月 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 凝縮系物理学
  • 材料化学

フィンガープリント

「Intrinsic- and extrinsic-defect formation in silica glasses by radiation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル