Intrinsic complexity of the melt-quenched amorphous Ge2Sb 2Te5 memory alloy

M. Krbal, A. V. Kolobov, P. Fons, J. Tominaga, S. R. Elliott, J. Hegedus, T. Uruga

研究成果: Article査読

104 被引用数 (Scopus)

抄録

Through the use of first-principles Ge K-edge XANES simulations we demonstrate that the structure of melt-quenched amorphous Ge-Sb-Te is intrinsically complex and is a mixture of Ge(3):Te(3) and Ge(4):Te(2) configurations in comparable concentrations, in contrast to the as-deposited amorphous phase that is dominated by the Ge(4):Te(2) configurations. The reasons for Ge-Te polyvalency are discussed and it is argued that both configurations are compatible with the Mott 8-N rule and the definition of an ideal amorphous solid. The near-perfect Te-Te distance match between the two major configurations accounts for the high cyclability of phase-change materials. Stable compositions in the Ge-Sb-Te system are suggested.

本文言語English
論文番号054203
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
83
5
DOI
出版ステータスPublished - 2011 2 11
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Intrinsic complexity of the melt-quenched amorphous Ge<sub>2</sub>Sb <sub>2</sub>Te<sub>5</sub> memory alloy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル