Intrinsic difference in Schottky barrier effect for device configuration of organic thin-film transistors

Kei Noda, Yasuo Wada, Toru Toyabe

研究成果: Article

13 引用 (Scopus)

抄録

Schottky barrier effect for n-channel organic thin-film transistors (OTFTs) with bottom-gate, top-contact (TC) and bottom-gate, bottom-contact (BC) configuration was examined by using device simulation with a thin-film organic transistor advanced simulator (TOTAS). A thermionic field emission (TFE) model which addresses tunneling of thermally excited electrons was applied as a carrier injection model of OTFTs. Simulation results reveal that the BC configuration is affected by Schottky barrier more severely than the TC configuration under the same condition for device parameters, and that this discrepancy in device characteristics can be completely alleviated by contact-area-limited doping, where highly-doped semiconducting layers are prepared in the neighborhood of contact electrodes. Moreover, the existence of an intrinsic Schottky barrier is indicated even though an ohmic-contact condition is assumed, which becomes more prominent for lower bulk carrier concentration in organic semiconductor. This work suggests the availability of the TFE model for simulating realistic OTFT devices with Schottky contacts. From the simulation results, intrinsic differences in device performance for the TC and BC configurations are discussed.

元の言語English
ページ(範囲)1571-1578
ページ数8
ジャーナルOrganic Electronics: physics, materials, applications
15
発行部数7
DOI
出版物ステータスPublished - 2014

Fingerprint

Thin film transistors
Thermionic emission
transistors
Field emission
thin films
configurations
thermionic emission
Semiconducting organic compounds
Electron tunneling
Ohmic contacts
field emission
Carrier concentration
Transistors
Simulators
Doping (additives)
Availability
simulation
carrier injection
organic semiconductors
Thin films

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

これを引用

@article{77e40c8120f249dfb63ba19cd020a896,
title = "Intrinsic difference in Schottky barrier effect for device configuration of organic thin-film transistors",
abstract = "Schottky barrier effect for n-channel organic thin-film transistors (OTFTs) with bottom-gate, top-contact (TC) and bottom-gate, bottom-contact (BC) configuration was examined by using device simulation with a thin-film organic transistor advanced simulator (TOTAS). A thermionic field emission (TFE) model which addresses tunneling of thermally excited electrons was applied as a carrier injection model of OTFTs. Simulation results reveal that the BC configuration is affected by Schottky barrier more severely than the TC configuration under the same condition for device parameters, and that this discrepancy in device characteristics can be completely alleviated by contact-area-limited doping, where highly-doped semiconducting layers are prepared in the neighborhood of contact electrodes. Moreover, the existence of an intrinsic Schottky barrier is indicated even though an ohmic-contact condition is assumed, which becomes more prominent for lower bulk carrier concentration in organic semiconductor. This work suggests the availability of the TFE model for simulating realistic OTFT devices with Schottky contacts. From the simulation results, intrinsic differences in device performance for the TC and BC configurations are discussed.",
keywords = "Contact-area-limited doping, Device simulation, Organic thin-film transistor, Schottky barrier, Thermionic field emission",
author = "Kei Noda and Yasuo Wada and Toru Toyabe",
year = "2014",
doi = "10.1016/j.orgel.2014.04.018",
language = "English",
volume = "15",
pages = "1571--1578",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier",
number = "7",

}

TY - JOUR

T1 - Intrinsic difference in Schottky barrier effect for device configuration of organic thin-film transistors

AU - Noda, Kei

AU - Wada, Yasuo

AU - Toyabe, Toru

PY - 2014

Y1 - 2014

N2 - Schottky barrier effect for n-channel organic thin-film transistors (OTFTs) with bottom-gate, top-contact (TC) and bottom-gate, bottom-contact (BC) configuration was examined by using device simulation with a thin-film organic transistor advanced simulator (TOTAS). A thermionic field emission (TFE) model which addresses tunneling of thermally excited electrons was applied as a carrier injection model of OTFTs. Simulation results reveal that the BC configuration is affected by Schottky barrier more severely than the TC configuration under the same condition for device parameters, and that this discrepancy in device characteristics can be completely alleviated by contact-area-limited doping, where highly-doped semiconducting layers are prepared in the neighborhood of contact electrodes. Moreover, the existence of an intrinsic Schottky barrier is indicated even though an ohmic-contact condition is assumed, which becomes more prominent for lower bulk carrier concentration in organic semiconductor. This work suggests the availability of the TFE model for simulating realistic OTFT devices with Schottky contacts. From the simulation results, intrinsic differences in device performance for the TC and BC configurations are discussed.

AB - Schottky barrier effect for n-channel organic thin-film transistors (OTFTs) with bottom-gate, top-contact (TC) and bottom-gate, bottom-contact (BC) configuration was examined by using device simulation with a thin-film organic transistor advanced simulator (TOTAS). A thermionic field emission (TFE) model which addresses tunneling of thermally excited electrons was applied as a carrier injection model of OTFTs. Simulation results reveal that the BC configuration is affected by Schottky barrier more severely than the TC configuration under the same condition for device parameters, and that this discrepancy in device characteristics can be completely alleviated by contact-area-limited doping, where highly-doped semiconducting layers are prepared in the neighborhood of contact electrodes. Moreover, the existence of an intrinsic Schottky barrier is indicated even though an ohmic-contact condition is assumed, which becomes more prominent for lower bulk carrier concentration in organic semiconductor. This work suggests the availability of the TFE model for simulating realistic OTFT devices with Schottky contacts. From the simulation results, intrinsic differences in device performance for the TC and BC configurations are discussed.

KW - Contact-area-limited doping

KW - Device simulation

KW - Organic thin-film transistor

KW - Schottky barrier

KW - Thermionic field emission

UR - http://www.scopus.com/inward/record.url?scp=84900490600&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900490600&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2014.04.018

DO - 10.1016/j.orgel.2014.04.018

M3 - Article

AN - SCOPUS:84900490600

VL - 15

SP - 1571

EP - 1578

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 7

ER -