TY - JOUR
T1 - Intrinsic spin Hall effect in oxidized platinum/magnetic oxide heterostructure
AU - Li, Tianhui
AU - Jia, Wei
AU - Gao, Tenghua
AU - Haku, Satoshi
AU - Ye, Zhixiang
AU - Qiu, Mingxia
AU - An, Hongyu
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (Grant No. 52001215), the Guangdong Basic and Applied Basic Research Foundation (Grant No. 2021A1515012055), the Industrial Research and Development Project of SZTU (Grant No. KY2022QJKCZ005), the Education Department of Guangdong Province (Grant No. 2021KCXTD045), the University Engineering Research Center of Crystal Growth and Applications of Guangdong Province (No. 2020GCZX005), and the Natural Science Foundation of Top Talent of Shenzhen Technology University (Grant No. 2019208).
Publisher Copyright:
© 2022 Author(s).
PY - 2022/9/26
Y1 - 2022/9/26
N2 - Oxidizing the heavy metal (HM) has been reported to be a simple and efficient method to enhance the generation efficiency of the spin-orbit torques (SOTs) in the HM/ferromagnet (FM) heterostructure, which has attracted intensive studies. However, by now all the previous studies were performed using an oxidized HM/metallic magnet heterostructure. The SOT in the oxidized HM/magnetic oxide heterostructure still remains elusive, which has not been reported yet. In this work, we report the study of the SOT generation and spin Hall effect in the oxidized platinum/magnetic oxide heterostructure. By changing the oxidation level of Pt(O) in the Pt(O)/Tm3Fe5O12 (TmIG) bilayer, we demonstrate that the SOT efficiency drastically decreases with the increase in the oxidation level, which is completely opposite to that in the Pt(O)/metallic magnet. This result indicates that the interfacial oxidation of the FM layer in the generally studied oxidized HM/metallic magnet bilayer significantly contributes to the interfacial Rashba effect, which drastically enhances the SOT efficiency. We further demonstrate that the spin Hall conductivity of Pt is very sensitive to the electric conductivity, which drastically increases with the electric conductivity. This drastic increase is attributed to the intrinsic contribution of Pt in the dirty-metal regime, which is dominated by the carrier lifetime. Our study provides a piece of information for the basic understanding of the SOT and spin Hall effect in the oxidized HM/magnetic oxide heterostructure.
AB - Oxidizing the heavy metal (HM) has been reported to be a simple and efficient method to enhance the generation efficiency of the spin-orbit torques (SOTs) in the HM/ferromagnet (FM) heterostructure, which has attracted intensive studies. However, by now all the previous studies were performed using an oxidized HM/metallic magnet heterostructure. The SOT in the oxidized HM/magnetic oxide heterostructure still remains elusive, which has not been reported yet. In this work, we report the study of the SOT generation and spin Hall effect in the oxidized platinum/magnetic oxide heterostructure. By changing the oxidation level of Pt(O) in the Pt(O)/Tm3Fe5O12 (TmIG) bilayer, we demonstrate that the SOT efficiency drastically decreases with the increase in the oxidation level, which is completely opposite to that in the Pt(O)/metallic magnet. This result indicates that the interfacial oxidation of the FM layer in the generally studied oxidized HM/metallic magnet bilayer significantly contributes to the interfacial Rashba effect, which drastically enhances the SOT efficiency. We further demonstrate that the spin Hall conductivity of Pt is very sensitive to the electric conductivity, which drastically increases with the electric conductivity. This drastic increase is attributed to the intrinsic contribution of Pt in the dirty-metal regime, which is dominated by the carrier lifetime. Our study provides a piece of information for the basic understanding of the SOT and spin Hall effect in the oxidized HM/magnetic oxide heterostructure.
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U2 - 10.1063/5.0102823
DO - 10.1063/5.0102823
M3 - Article
AN - SCOPUS:85139170484
VL - 121
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
M1 - 132403
ER -