Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes

Eiji Ohta, K. Kakishita, H. Y. Lee, T. Sato, M. Sakata

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Defect levels in n-type Si Schottky barrier diodes made by resistive evaporation have been investigated by deep level transient spectroscopy. Three defect levels are observed at 0.16, 0.14, and 0.12 eV below the conduction band. The concentrations of the defect levels exponentially decrease into the substrate. The defects are introduced during etching process rather than evaporation process. The concentration of the defects increase with the thickness of the layer removed by etching before Schottky metal deposition, and decrease with the etching rate. This suggests that the defect levels are produced near the surface and are driven into the substrate during etching processes.

本文言語English
ページ(範囲)3928-3932
ページ数5
ジャーナルJournal of Applied Physics
65
10
DOI
出版ステータスPublished - 1989

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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