Investigation of data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates

H. Uenohara, K. Tateno, T. Kagawa, Y. Ohiso, H. Tsuda, T. Kurokawa, C. Amano

研究成果: Article

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The data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.

元の言語English
ページ(範囲)45-46
ページ数2
ジャーナルElectronics Letters
35
発行部数1
DOI
出版物ステータスPublished - 1999 1 7
外部発表Yes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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