TY - JOUR
T1 - Investigation of ferroelectric properties of vinylidene fluoride oligomer evaporated films
AU - Noda, K.
AU - Ishida, K.
AU - Mochizuki, K.
AU - Kubono, A.
AU - Horiuchi, T.
AU - Yamada, H.
AU - Matsushige, K.
PY - 2003
Y1 - 2003
N2 - Structures and electrical properties of newly synthesized vinylidene fluoride (VDF) oligomer [CF3(CH2CF2)17I] films evaporated onto various substrates around liquid nitrogen temperature were investigated. As a result, the VDF oligomer films were mainly formed with ferroelectric phase (form I) crystals and the molecular chains were oriented parallel to the substrate surfaces regardless of both the kind of the substrates and the thickness of the VDF oligomer films. In addition to these properties, the VDF oligomer films showed polarization reversal due to 180° rotation of the polar VDF oligomer molecules according to the applied voltages. This ferroelectric behavior was verified by local poling and piezoresponse measurements with an atomic force microscope, and by measurements of D-E hysteresis curves.
AB - Structures and electrical properties of newly synthesized vinylidene fluoride (VDF) oligomer [CF3(CH2CF2)17I] films evaporated onto various substrates around liquid nitrogen temperature were investigated. As a result, the VDF oligomer films were mainly formed with ferroelectric phase (form I) crystals and the molecular chains were oriented parallel to the substrate surfaces regardless of both the kind of the substrates and the thickness of the VDF oligomer films. In addition to these properties, the VDF oligomer films showed polarization reversal due to 180° rotation of the polar VDF oligomer molecules according to the applied voltages. This ferroelectric behavior was verified by local poling and piezoresponse measurements with an atomic force microscope, and by measurements of D-E hysteresis curves.
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M3 - Conference article
AN - SCOPUS:0037699300
VL - 748
SP - 217
EP - 222
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
T2 - Ferroelectric Thin Films XI
Y2 - 2 December 2002 through 5 December 2002
ER -