Investigation of heterostructure between diamond and iridium on sapphire

A. Samoto, S. Ito, A. Hotta, T. Hasebe, Y. Ando, A. Sawabe, T. Suzuki

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Diamond thin film has outstanding physical and chemical properties. Diamond-on-iridium configurations have been prepared by several methods, such as microwave enhanced plasma CVD, direct currency plasma CVD, and hot filament CVD. In this study, an Ir interlayer was deposited on single crystal sapphires (Al2O3) with A-planes {1120} by an RF magnetron sputtering method after annealing samples. In addition, a diamond thin film was deposited by a microwave enhanced plasma chemical vapor deposition (MPCVD) method using a mixture of hydrogen and methane gases after a bias enhanced nucleation (BEN) procedure. Ir (001) was grown on the A-plane of sapphire by X-ray pole figure measurement. Diamond thin films were synthesized on each Ir/sapphire substrate and characterized by SEM, Raman spectroscopy. D {100} faces were exhibited in substantial areas of diamond films, and a flat D {100} plane was partially obtained. It is considered that diamond thin films on Ir {100} were mainly grown towards the <100> direction and were epitaxially grown in part.

本文言語English
ページ(範囲)1039-1044
ページ数6
ジャーナルDiamond and Related Materials
17
7-10
DOI
出版ステータスPublished - 2008 7 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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