Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.
|ジャーナル||Materials Science Forum|
|出版ステータス||Published - 1997|
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