Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As

K. M. Itoh, T. Kinoshita, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. Muto, J. W. Farmer, V. I. Ozhogin

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.

本文言語English
ページ(範囲)77-82
ページ数6
ジャーナルMaterials Science Forum
258-263
PART 1
DOI
出版ステータスPublished - 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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