Iron-related deep levels in n-type silicon

K. Kakishita, K. Kawakami, S. Suzuki, E. Ohta, M. Sakata

研究成果: Article

15 引用 (Scopus)

抄録

Deep levels in iron-doped n-type silicon have been investigated by deep-level transient spectroscopy (DLTS). Three deep levels of E c-0.29 eV (E1), Ec-0.36 eV (E2), and Ec-0.48 eV (E3) were observed. The concentration of E1 and E2 levels increased during the storage at room temperature. The depth profile of the E3 level concentration indicates the out-diffusion and precipitation of the defects related to the E3 level. In addition, after annealing at 80 °C for 30 min, the E2 and E3 concentrations decreased and then recovered at room temperature. These results suggest that the defects related to these levels are mobile during quenching and storage at room temperature. The temperature dependence of the E3 level concentration shows a formation energy of about 2 eV, which is smaller than that of interstitial iron, and the E3 level concentration is two orders of magnitude lower than the concentration of interstitial iron. The origins of these levels are probably loosely associated iron-related complexes such as iron-acceptor pairs.

元の言語English
ページ(範囲)3923-3927
ページ数5
ジャーナルJournal of Applied Physics
65
発行部数10
DOI
出版物ステータスPublished - 1989

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iron
silicon
interstitials
room temperature
defects
energy of formation
quenching
temperature dependence
annealing
profiles
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Kakishita, K., Kawakami, K., Suzuki, S., Ohta, E., & Sakata, M. (1989). Iron-related deep levels in n-type silicon. Journal of Applied Physics, 65(10), 3923-3927. https://doi.org/10.1063/1.343433

Iron-related deep levels in n-type silicon. / Kakishita, K.; Kawakami, K.; Suzuki, S.; Ohta, E.; Sakata, M.

:: Journal of Applied Physics, 巻 65, 番号 10, 1989, p. 3923-3927.

研究成果: Article

Kakishita, K, Kawakami, K, Suzuki, S, Ohta, E & Sakata, M 1989, 'Iron-related deep levels in n-type silicon', Journal of Applied Physics, 巻. 65, 番号 10, pp. 3923-3927. https://doi.org/10.1063/1.343433
Kakishita K, Kawakami K, Suzuki S, Ohta E, Sakata M. Iron-related deep levels in n-type silicon. Journal of Applied Physics. 1989;65(10):3923-3927. https://doi.org/10.1063/1.343433
Kakishita, K. ; Kawakami, K. ; Suzuki, S. ; Ohta, E. ; Sakata, M. / Iron-related deep levels in n-type silicon. :: Journal of Applied Physics. 1989 ; 巻 65, 番号 10. pp. 3923-3927.
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