Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions

A. Yang, H. J. Lian, M. L.W. Thewalt, M. Uemura, A. Sagara, K. M. Itoh, E. E. Haller, J. W. Ager, S. A. Lyon

研究成果: Conference article

4 引用 (Scopus)

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The strain-induced splitting of the impurity bound exciton (BE) transitions in epitaxial layers of isotopically enriched 28Si grown on silicon substrates of natural isotopic composition has been studied using high-resolution photoluminescence (PL) spectroscopy. The slight difference in lattice parameter between the 28Si epitaxial layer and the natural silicon substrate induces a biaxial strain in the epitaxial layer, which can be detected with remarkable sensitivity using low-temperature PL. Measurement of the splitting of the BE transitions in these epitaxial layers of 28Si provides us a method for determining the isotopic mass dependence of the lattice parameter in silicon with unprecedented precision. The level of precision achieved is attributed to the fact that the BE no-phonon transitions in isotopically enriched silicon are much sharper than in natural silicon. We find that scaled to an isotopic mass difference (ΔM) of 1 amu, the relative difference in lattice parameter (|Δa/a|) for silicon is 3.3×10-5.

元の言語English
ページ(範囲)54-56
ページ数3
ジャーナルPhysica B: Condensed Matter
376-377
発行部数1
DOI
出版物ステータスPublished - 2006 4 1
イベントProceedings of the 23rd International Conference on Defects in Semiconductors -
継続期間: 2005 7 242005 7 29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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