Isotopically engineered silicon nanoelectronics

Kohei M. Itoh

doi:10.1109/IEDM.2007.4418931

Isotopically engineered silicon nanoelectronics

Kohei M. Itoh

物理情報工学科

研究成果: Conference article › 査読

抄録

Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.

本文言語	English
論文番号	4418931
ページ（範囲）	303-306
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting, IEDM
DOI	https://doi.org/10.1109/IEDM.2007.4418931
出版ステータス	Published - 2007 12月 1
イベント	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States 継続期間: 2007 12月 10 → 2007 12月 12

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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10.1109/IEDM.2007.4418931

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title = "Isotopically engineered silicon nanoelectronics",

abstract = "Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.",

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JO - Technical Digest - International Electron Devices Meeting

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Isotopically engineered silicon nanoelectronics

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