抄録
Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Technical Digest - International Electron Devices Meeting, IEDM |
| ページ | 303-306 |
| ページ数 | 4 |
| DOI | |
| 出版物ステータス | Published - 2007 |
| イベント | 2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States 継続期間: 2007 12 10 → 2007 12 12 |
Other
| Other | 2007 IEEE International Electron Devices Meeting, IEDM |
|---|---|
| 国 | United States |
| 市 | Washington, DC |
| 期間 | 07/12/10 → 07/12/12 |
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ASJC Scopus subject areas
- Engineering(all)
これを引用
Isotopically engineered silicon nanoelectronics. / Itoh, Kohei M.
Technical Digest - International Electron Devices Meeting, IEDM. 2007. p. 303-306 4418931.研究成果: Conference contribution
}
TY - GEN
T1 - Isotopically engineered silicon nanoelectronics
AU - Itoh, Kohei M
PY - 2007
Y1 - 2007
N2 - Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.
AB - Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.
UR - http://www.scopus.com/inward/record.url?scp=50249123445&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50249123445&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2007.4418931
DO - 10.1109/IEDM.2007.4418931
M3 - Conference contribution
AN - SCOPUS:50249123445
SP - 303
EP - 306
BT - Technical Digest - International Electron Devices Meeting, IEDM
ER -