Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI d/Id) by the surface holes is smaller in high-κ pFETs, comparing to the SiO2 pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.