Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

    研究成果: Conference contribution

    15 被引用数 (Scopus)

    抄録

    Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI d/Id) by the surface holes is smaller in high-κ pFETs, comparing to the SiO2 pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.

    本文言語English
    ホスト出版物のタイトル2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
    ページ78-79
    ページ数2
    DOI
    出版ステータスPublished - 2008 9 23
    イベント2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States
    継続期間: 2008 6 172008 6 19

    出版物シリーズ

    名前Digest of Technical Papers - Symposium on VLSI Technology
    ISSN(印刷版)0743-1562

    Other

    Other2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
    国/地域United States
    CityHonolulu, HI
    Period08/6/1708/6/19

    ASJC Scopus subject areas

    • 電子工学および電気工学

    フィンガープリント

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