Key capacitive parameters for designing single-electron transistor charge sensors

Kosuke Horibe, Tetsuo Kodera, Tomohiro Kambara, Ken Uchida, Shunri Oda

    研究成果: Article

    15 引用 (Scopus)

    抜粋

    Single-electron transistors (SETs) are efficient charge sensors for reading out spin or charge qubits confined in quantum dots (QDs). To investigate their capacitive parameters, which are related to the signal-to-noise ratio (SNR) during qubit readout, twin silicon single QDs were fabricated using a lithographic process on a silicon-on-insulator substrate. Since the configuration and dimensions of the QDs could be determined by direct imaging, the theoretical capacitive parameters could be compared to the measured values. Good agreement was found between the calculated and measured values, which confirms the validity of the calculation method. The results indicated that decreasing the SET diameter reduces the capacitive coupling between qubits but increases the signal-to-noise ratio for both dc and radio frequency single-shot measurements. Since these results are independent of the device materials, they are useful for establishing guidelines for the design of SET charge sensors in lateral QD-SET structures based on a two-dimensional electron gas.

    元の言語English
    記事番号093715
    ジャーナルJournal of Applied Physics
    111
    発行部数9
    DOI
    出版物ステータスPublished - 2012 5 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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