Kinking and Cracking Caused by Slip in Single Crystals of Silicon Carbide

Hisayuki Suematsu, Tetsuya Suzuki, Takayoshi Iseki, Tsutomu Mori

研究成果: Article査読

35 被引用数 (Scopus)

抄録

α‐SiC single crystals were compressed parallel to the basal plane, (0001), at temperatures between 900° and 1500°C. Plastic deformation by slip on the basal planes which accompanied kinking occurred above 1000°C. At kink boundaries, two kinds of cracks were observed. One was the cracks elongated parallel to the basal plane. This kind of crack was initiated by the tensile stress produced by piled‐up dislocations on the basal planes against a kink boundary. The other was on a kink boundary, and was induced by the stress of dislocations, heterogeneously distributed on the kink boundary. The initiation of cracks produced by dislocations was considered to be a possible cause of fracture in polycrystalline SiC at high temperatures.

本文言語English
ページ(範囲)173-178
ページ数6
ジャーナルJournal of the American Ceramic Society
74
1
DOI
出版ステータスPublished - 1991 1
外部発表はい

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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