Kondo effect in silicon quantum dots with valley degeneracy

M. Eto, Y. Hada

研究成果: Conference contribution

4 引用 (Scopus)

抜粋

We theoretically examine electronic states and Kondo effect in silicon quantum dots, taking into account a multivalley structure of conduction band. In the quantum dots, discrete energy levels are almost degenerate owing to two equivalent valleys. When an electron occupies the levels, an enhanced Kondo effect of SU(4) symmetry is expected. When two electrons are accommodated in a quantum dot, three spin-singlet and one spin-triplet states can be six-fold degenerate since the exchange integral is negligible when the dot size is much larger than the lattice constant of silicon. An underscreening Kondo effect involving these states is realized if tunnel couplings are equivalent for the levels. Otherwise, a "two-stage Kondo effect" is observed as a function of temperature, reflecting two independent SU(2) Kondo effects.

元の言語English
ホスト出版物のタイトルLOW TEMPERATURE PHYSICS
ホスト出版物のサブタイトル24th International Conference on Low Temperature Physics - LT24
ページ1382-1383
ページ数2
DOI
出版物ステータスPublished - 2006 12 1
イベントLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
継続期間: 2006 8 102006 10 17

出版物シリーズ

名前AIP Conference Proceedings
850
ISSN(印刷物)0094-243X
ISSN(電子版)1551-7616

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
United States
Orlando, FL
期間06/8/1006/10/17

    フィンガープリント

ASJC Scopus subject areas

  • Physics and Astronomy(all)

これを引用

Eto, M., & Hada, Y. (2006). Kondo effect in silicon quantum dots with valley degeneracy. : LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 (pp. 1382-1383). (AIP Conference Proceedings; 巻数 850). https://doi.org/10.1063/1.2355221