Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

Shogo Ishizuka, Akimasa Yamada, Hajime Shibata, Paul Fons, Keiichiro Sakurai, Koji Matsubara, Shigeru Niki

研究成果: Article査読

26 被引用数 (Scopus)

抄録

Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

本文言語English
ページ(範囲)792-796
ページ数5
ジャーナルSolar Energy Materials and Solar Cells
93
6-7
DOI
出版ステータスPublished - 2009 6
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜

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