抄録
Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.
本文言語 | English |
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ページ(範囲) | 792-796 |
ページ数 | 5 |
ジャーナル | Solar Energy Materials and Solar Cells |
巻 | 93 |
号 | 6-7 |
DOI | |
出版ステータス | Published - 2009 6月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 再生可能エネルギー、持続可能性、環境
- 表面、皮膜および薄膜