Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

Shogo Ishizuka; Akimasa Yamada; Hajime Shibata; Paul Fons; Keiichiro Sakurai; Koji Matsubara; Shigeru Niki

doi:10.1016/j.solmat.2008.09.043

Large grain Cu(In,Ga)Se₂ thin film growth using a Se-radical beam source

Shogo Ishizuka, Akimasa Yamada, Hajime Shibata, Paul Fons, Keiichiro Sakurai, Koji Matsubara, Shigeru Niki

研究成果: Article › 査読

26 被引用数 (Scopus)

抄録

Cu(In,Ga)Se₂ (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe₂ (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe₂ (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

本文言語	English
ページ（範囲）	792-796
ページ数	5
ジャーナル	Solar Energy Materials and Solar Cells
巻	93
号	6-7
DOI	https://doi.org/10.1016/j.solmat.2008.09.043
出版ステータス	Published - 2009 6月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
再生可能エネルギー、持続可能性、環境
表面、皮膜および薄膜

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

文献へのアクセス

10.1016/j.solmat.2008.09.043

他のファイルとリンク

引用スタイル

@article{be261eb75c3746d2820a211c20be3d86,

title = "Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source",

abstract = "Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.",

keywords = "CGS, CIGS, CIS, Cu(In,Ga)Se, Se-radical source, Thin film",

author = "Shogo Ishizuka and Akimasa Yamada and Hajime Shibata and Paul Fons and Keiichiro Sakurai and Koji Matsubara and Shigeru Niki",

note = "Funding Information: This work was supported in part by the Incorporated Administrative Agency, New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).",

year = "2009",

month = jun,

doi = "10.1016/j.solmat.2008.09.043",

language = "English",

volume = "93",

pages = "792--796",

journal = "Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "6-7",

}

TY - JOUR

T1 - Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

AU - Ishizuka, Shogo

AU - Yamada, Akimasa

AU - Shibata, Hajime

AU - Fons, Paul

AU - Sakurai, Keiichiro

AU - Matsubara, Koji

AU - Niki, Shigeru

N1 - Funding Information: This work was supported in part by the Incorporated Administrative Agency, New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).

PY - 2009/6

Y1 - 2009/6

N2 - Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

AB - Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

KW - CGS

KW - CIGS

KW - CIS

KW - Cu(In,Ga)Se

KW - Se-radical source

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=67349264082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349264082&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2008.09.043

DO - 10.1016/j.solmat.2008.09.043

M3 - Article

AN - SCOPUS:67349264082

VL - 93

SP - 792

EP - 796

JO - Solar Cells

JF - Solar Cells

SN - 0927-0248

IS - 6-7

ER -