@inproceedings{4611acf95c994355a0709eccb15d3943,
title = "Laser recovery of subsurface damages in chemomechanically polished silicon wafers",
abstract = "Silicon wafers are the most widely used semiconductor substrates. It has been considered that silicon wafers after chemomechanical polishing (CMP) have no subsurface defects. However, in fact, defects such as dislocation and latent microcracks will remain in the wafers if CMP is performed under unsuitable conditions. In this study, we confirmed the existence of subsurface damages at a depth of submicron level in a silicon wafer after CMP, then used a nanosecond pulsed Nd:YAG laser to repair the subsurface damages. It was found that subsurface defects were recovered to a single crystalline structure by laser irradiation without changing the surface topography. The phase transformation of silicon before and after laser irradiation was confirmed by laser Raman spectroscopy and chemical etching using saturated aqueous solution of Ca(OH)2. The findings from this study contributes to improve the quality of silicon wafers for high-performance semiconductors.",
keywords = "Chemical etching, Laser recovery, Polished wafer, Single crystalline silicon, Subsurface damage",
author = "Keiichiro Niitsu and Yu Tayama and Hidenobu Maehara and Taketoshi Kato and Jiwang Yan",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 2nd International Conference on Science and Engineering of Materials, ICoSEM 2015 ; Conference date: 16-11-2015 Through 18-11-2015",
year = "2016",
doi = "10.4028/www.scientific.net/KEM.701.97",
language = "English",
isbn = "9783038356875",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd",
pages = "97--100",
editor = "Chin-Che Tin and Chin-Che Tin and Johan, {Mohd. Rafie}",
booktitle = "Science and Engineering of Materials II",
}