Laser recovery of subsurface damages in chemomechanically polished silicon wafers

Keiichiro Niitsu, Yu Tayama, Hidenobu Maehara, Taketoshi Kato, Jiwang Yan

研究成果: Conference contribution

抄録

Silicon wafers are the most widely used semiconductor substrates. It has been considered that silicon wafers after chemomechanical polishing (CMP) have no subsurface defects. However, in fact, defects such as dislocation and latent microcracks will remain in the wafers if CMP is performed under unsuitable conditions. In this study, we confirmed the existence of subsurface damages at a depth of submicron level in a silicon wafer after CMP, then used a nanosecond pulsed Nd:YAG laser to repair the subsurface damages. It was found that subsurface defects were recovered to a single crystalline structure by laser irradiation without changing the surface topography. The phase transformation of silicon before and after laser irradiation was confirmed by laser Raman spectroscopy and chemical etching using saturated aqueous solution of Ca(OH)2. The findings from this study contributes to improve the quality of silicon wafers for high-performance semiconductors.

本文言語English
ホスト出版物のタイトルScience and Engineering of Materials II
ホスト出版物のサブタイトルMaterials and Technology for a Sustainable Future
編集者Chin-Che Tin, Chin-Che Tin, Mohd. Rafie Johan
出版社Trans Tech Publications Ltd
ページ97-100
ページ数4
ISBN(印刷版)9783038356875
DOI
出版ステータスPublished - 2016
イベント2nd International Conference on Science and Engineering of Materials, ICoSEM 2015 - Kuala Lumpur, Malaysia
継続期間: 2015 11 162015 11 18

出版物シリーズ

名前Key Engineering Materials
701
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Other

Other2nd International Conference on Science and Engineering of Materials, ICoSEM 2015
国/地域Malaysia
CityKuala Lumpur
Period15/11/1615/11/18

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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