We have fabricated ZnO thin films on sapphire substrates at temperatures ranging from 350 to 1000°C by laser molecular-beam epitaxy. With increasing growth temperature, lateral grain size evaluated by X-ray reciprocal space mapping increased resulting in improved electron mobility. When the film was grown at 1000°C, an electron mobility as large as 90 cm2/V s was achieved. By annealing in 1 atm of oxygen at 1000°C, thin films having much larger grain size (> 5μm2) and higher mobility (approx. 120 cm2/V s) comparable with those for bulk single crystals could be obtained.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 2000 6 2|
|イベント||The 9th International Conference on II-VI Compounds - Kyoto, Jpn|
継続期間: 1999 11 1 → 1999 11 5
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