Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates

A. Ohtomo, H. Kimura, K. Saito, T. Makino, Y. Segawa, H. Koinuma, M. Kawasaki

研究成果: Conference article査読

66 被引用数 (Scopus)

抄録

We have fabricated ZnO thin films on sapphire substrates at temperatures ranging from 350 to 1000°C by laser molecular-beam epitaxy. With increasing growth temperature, lateral grain size evaluated by X-ray reciprocal space mapping increased resulting in improved electron mobility. When the film was grown at 1000°C, an electron mobility as large as 90 cm2/V s was achieved. By annealing in 1 atm of oxygen at 1000°C, thin films having much larger grain size (> 5μm2) and higher mobility (approx. 120 cm2/V s) comparable with those for bulk single crystals could be obtained.

本文言語English
ページ(範囲)284-288
ページ数5
ジャーナルJournal of Crystal Growth
214
DOI
出版ステータスPublished - 2000 6 2
外部発表はい
イベントThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
継続期間: 1999 11 11999 11 5

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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