Level-shifter-less approach for multi-VDD design to use body bias control in FD-SOI

Kimiyoshi Usami, Shunsuke Kogure, Yusuke Yoshida, Ryo Magasaki, Hideharu Amano

研究成果: Conference contribution

1 引用 (Scopus)

抄録

Level shifters to convert signal swings from low-voltage (VDDL) to high-voltage (VDDH) are required at the boundary of voltage domains in SoC employing multiple supply voltages. However, they cost delay, power and area in addition to increasing the complexity of physical design. This paper proposes a level-shifter-less (LSL) approach to use a reverse body bias (RBB) in the VDDH domain and superior threshold-voltage modulation capability of FD-SOI devices. Simulation results and measurements of a fabricated chip demonstrated that the chip applying the LSL approach correctly operates at VDDL=0.6V and VDDH=1.2V under RBB of 2V for pMOS transistors while suppressing the static dc current in the VDDH domain.

元の言語English
ホスト出版物のタイトル25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017 - Proceedings
出版者IEEE Computer Society
ISBN(電子版)9781538628805
DOI
出版物ステータスPublished - 2017 12 13
イベント25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017 - Abu Dhabi, United Arab Emirates
継続期間: 2017 10 232017 10 25

Other

Other25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017
United Arab Emirates
Abu Dhabi
期間17/10/2317/10/25

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Electric potential
Threshold voltage
Transistors
Modulation
Costs

ASJC Scopus subject areas

  • Hardware and Architecture
  • Software
  • Electrical and Electronic Engineering

これを引用

Usami, K., Kogure, S., Yoshida, Y., Magasaki, R., & Amano, H. (2017). Level-shifter-less approach for multi-VDD design to use body bias control in FD-SOI. : 25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017 - Proceedings [8203473] IEEE Computer Society. https://doi.org/10.1109/VLSI-SoC.2017.8203473

Level-shifter-less approach for multi-VDD design to use body bias control in FD-SOI. / Usami, Kimiyoshi; Kogure, Shunsuke; Yoshida, Yusuke; Magasaki, Ryo; Amano, Hideharu.

25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017 - Proceedings. IEEE Computer Society, 2017. 8203473.

研究成果: Conference contribution

Usami, K, Kogure, S, Yoshida, Y, Magasaki, R & Amano, H 2017, Level-shifter-less approach for multi-VDD design to use body bias control in FD-SOI. : 25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017 - Proceedings., 8203473, IEEE Computer Society, 25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017, Abu Dhabi, United Arab Emirates, 17/10/23. https://doi.org/10.1109/VLSI-SoC.2017.8203473
Usami K, Kogure S, Yoshida Y, Magasaki R, Amano H. Level-shifter-less approach for multi-VDD design to use body bias control in FD-SOI. : 25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017 - Proceedings. IEEE Computer Society. 2017. 8203473 https://doi.org/10.1109/VLSI-SoC.2017.8203473
Usami, Kimiyoshi ; Kogure, Shunsuke ; Yoshida, Yusuke ; Magasaki, Ryo ; Amano, Hideharu. / Level-shifter-less approach for multi-VDD design to use body bias control in FD-SOI. 25th IFIP/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2017 - Proceedings. IEEE Computer Society, 2017.
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abstract = "Level shifters to convert signal swings from low-voltage (VDDL) to high-voltage (VDDH) are required at the boundary of voltage domains in SoC employing multiple supply voltages. However, they cost delay, power and area in addition to increasing the complexity of physical design. This paper proposes a level-shifter-less (LSL) approach to use a reverse body bias (RBB) in the VDDH domain and superior threshold-voltage modulation capability of FD-SOI devices. Simulation results and measurements of a fabricated chip demonstrated that the chip applying the LSL approach correctly operates at VDDL=0.6V and VDDH=1.2V under RBB of 2V for pMOS transistors while suppressing the static dc current in the VDDH domain.",
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