@article{6239935ac7714797b63fc347b6e4f373,
title = "Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material",
abstract = "A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.",
author = "Motoki Takahashi and {Syafawati Humam}, Nurrul and Nobuhiro Tsumori and Toshiharu Saiki and Philippe Regreny and Michel Gendry",
note = "Funding Information: This research was supported by a Grant-in-Aid for Scientific Research (B) from the Ministry of Education, Culture, Sport, Science, and Technology of Japan. We would like to thank Keiichiro Yusu for the formation of the GeSbTe films on the QDs.",
year = "2013",
month = mar,
day = "4",
doi = "10.1063/1.4795291",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",
}