Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

Motoki Takahashi; Nurrul Syafawati Humam; Nobuhiro Tsumori; Toshiharu Saiki; Philippe Regreny; Michel Gendry

doi:10.1063/1.4795291

Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

Motoki Takahashi, Nurrul Syafawati Humam, Nobuhiro Tsumori, Toshiharu Saiki, Philippe Regreny, Michel Gendry

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

A method is proposed to precisely control the emission energy of semiconductor quantum dots (QDs) by the application of local strain due to volume expansion of a phase-change material (GeSbTe) upon amorphization. The feasibility of the method is experimentally demonstrated using photoluminescence (PL) spectroscopy of single InAs/InP QDs on which a GeSbTe thin film is deposited. A significant red-shift of the PL peak energy upon amorphization and subsequent recovery by recrystallization with laser annealing were observed.

本文言語	English
論文番号	093120
ジャーナル	Applied Physics Letters
巻	102
号	9
DOI	https://doi.org/10.1063/1.4795291
出版ステータス	Published - 2013 3 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.4795291

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引用スタイル

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AU - Regreny, Philippe

AU - Gendry, Michel

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